THE MINORITY CARRIER PROFILE IN THE FRONT REGION OF A p n JUNCTION SILICON SOLAR CELL AND ITS CONTRIBUTION TO THE SPECTRAL RESPONSE.

Silicon solar cells have been previously studied both theoretically and experimentally by many researchers. In this paper, the light generated excess minority carrier distribution in the front p region of a p n junction silicon solar cell has been studied, taking into account different parameters such as front surface recombination velocity, doping concentration and absorption coefficient. The minority carrier profile thus obtained helps in understanding the physics of the solar cells, particularly the photocurrent contribution from the front region of the cell