DOI: 10.1002/adma.200602798 Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors

Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconduc-tors has triggered their use as the active element in microelec-tronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, with-out a temperature hierarchy, and their mechanical flexibility. Applications are foreseen in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics. The first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organ-ic semiconductors have already been reported.[1] In present commercial displays, amorphous silicon, a-Si, is used as the active semiconductor. In order to be competitive, organic transistors should exhibit the same performance with respect to current modulation and electrical reliability. Th