TRANSPORT CHARACTERISTICS AND SUBTHRESHOLD BEHAVIOR OF HIGH-Κ DIELECTRIC DOUBLE GATE MOSFETS WITH PARALLEL CONNECTED GATES

Transport characteristics and subthreshold behavior of a structurally modified high-κ dielectric Double Gate MOSFET in which each gate was a parallel combination of three gates with different work functions were analyzed. Various scattering mechanisms were modeled through simple Bϋttiker probe method. The subthreshold leakage and the drain induced barrier lowering decreased and the threshold voltage increased when the screen gate workfunction was greater than the middle gate (control gate) workfunc-tion. The improvement in the subthreshold parameters was further enhanced when high- κ materials were used as insulator layers. High workfunction parallel connected metal gates exhibited better ballisticity as energy relaxing scattering mechanisms in those devices were less because of the decrease in the critical scattering length. It was concluded that to enhance further the compara-tively better subthreshold behavior exhibited by double gate MOSFETs with high- κ insulator materials, screen gates with large work function could be used