100 nm-GATE LATTICE-MATCHED InAlN/AlN/GaN HEMT FOR HIGH POWER Giga Hertz FREQUENCY APPLICATION

The InAlN/GaN heterojunction appears to be a promising alternative both in technology and performance to its common AlGaN/GaN configuration. The heterostructure opens up possibility of scaling down to 7 nm barrier with submicron gate length while maintaining higher power and frequency performance as well. In this paper, we have reported 100-nm gate configuration to reach record performance from polarization induced InAlN lattice-matched heterostructure. Simulation results show that maximum drain current of 2.5 A/mm with a transconductance of approximately 600 mS/mm and gain cut-off frequency of 154 GHz can be achieved from the designed HEMT. I