THE ELECTRICAL PROPERTIES OF InGaN/GaN/AlN MSM PHOTODETECTOR WITH Au CONTACT ELECTRODES

In this paper, we consider an InGaN/GaN/AlN ultraviolet (UV) photodetector. We first describe internal characteristics.The device exhibited a very good current of about 1.25mA.The variation of photocurrent versus optical wavelength demonstrates a peak of 0.6 µA at a wavelength of 402 nm, under-0.5 V bias