Add to ORKGAbstract. A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23 % of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol % compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm)
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...
2011 International Conference on Solid State Devices and Materials (SSDM 2011) : September 28-30, 20...
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...
Abstract. In this paper, a kind of alkaline slurry was introduced, in which silica was used as the a...
This study reports a weakly alkaline slurry (WAS) for copper barrier chemical mechanical planarizati...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Chemical mechanical polishing (CMP) with fixed abrasive pad is an alternative machining method to lo...
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices wi...
It is generally accepted that there is a minimum hardness requirement for abrasive particles to be u...
High removal rate of polysilicon and high selectivity between silicon and oxide, are two important p...
The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene ...
Ceria(CeO2) slurry has a strong merit in CMF polishing to give a high removal rate. However, it has ...
The influence of three different ion type surfactants on fumed silica slurry was studied. The increa...
The material removal characteristics of a silicon wafer were experimentally investigated with respec...
With the growing miniaturization of wiring technology in ULSI devices, recently Cu / low-k wiring ha...
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...
2011 International Conference on Solid State Devices and Materials (SSDM 2011) : September 28-30, 20...
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...
Abstract. In this paper, a kind of alkaline slurry was introduced, in which silica was used as the a...
This study reports a weakly alkaline slurry (WAS) for copper barrier chemical mechanical planarizati...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Chemical mechanical polishing (CMP) with fixed abrasive pad is an alternative machining method to lo...
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices wi...
It is generally accepted that there is a minimum hardness requirement for abrasive particles to be u...
High removal rate of polysilicon and high selectivity between silicon and oxide, are two important p...
The proposed slurry can be used to planarize polymeric candidate ILD materials such Benzocylobutene ...
Ceria(CeO2) slurry has a strong merit in CMF polishing to give a high removal rate. However, it has ...
The influence of three different ion type surfactants on fumed silica slurry was studied. The increa...
The material removal characteristics of a silicon wafer were experimentally investigated with respec...
With the growing miniaturization of wiring technology in ULSI devices, recently Cu / low-k wiring ha...
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...
2011 International Conference on Solid State Devices and Materials (SSDM 2011) : September 28-30, 20...
Chemical Mechanical Polishing (CMP) is essential for the manufacturing of recent high-performance el...