A study of In incorporation in InGaN layers grown by atmospheric pressure MOVPE

InGaN/GaN heterostructures have been deposited by MOVPE onto (0001) sapphire substrates. It has been noted that the Indium incorporation efficiency depends on different growth parameters, always amenable to growth rate, reaction kinetics and partial pressure of H2 in the reaction cell. In this work the composition of InGaN alloys, studied by photoluminescence and X−ray diffraction, is correlated with substrate temperature, substrate rotation, H2 partial pressure and input flows of TMG and TMI