Single electron devices have ultra-low power consumption and high integration density which makes them promising candidates as basic circuit elements of the next generation ultra-dense VLSI and ULSI circuits. In this paper, design, simulation and analysis of 2-to-4 decoder using single-electron tunnelling technology based threshold logic gate is presented. The circuit consists of four buffered threshold logic gates. The logic operation of the circuit is simulated and verified using Monte Carlo simulation. The free energy history and stability diagram verified the correct functioning of the circuit
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
Single-electron tunnelling (SET) devices have very promising properties, like their extremely low po...
This paper presents a single-electron tunneling (SET) device implementation of gates needed to build...
AbstractSingle electron tunnelling technology based threshold logic gate is one of the basic functio...
In this dissertation we investigate the implementation of computer arithmetic operations with Single...
This paper proposes novel universal logic gates using the current quantization characteristics of na...
Motivated by the emerging interest in new VLSI processes and technologies, such as Resonant Tunnelin...
Developments in theory and experiment have raised the prospect of an electronic technology based on ...
Abstract — The ability to control the transport of individual electrons in Single Electron Tunneling...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
Threshold logic gates are gaining more importance in recent years due to significant development in ...
This thesis research is focussed on the development of strongly coupled single-charge devices. Singl...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally duri...
The continuing scaling down of complementary metal oxide semiconductor (CMOS) has led researchers to...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
Single-electron tunnelling (SET) devices have very promising properties, like their extremely low po...
This paper presents a single-electron tunneling (SET) device implementation of gates needed to build...
AbstractSingle electron tunnelling technology based threshold logic gate is one of the basic functio...
In this dissertation we investigate the implementation of computer arithmetic operations with Single...
This paper proposes novel universal logic gates using the current quantization characteristics of na...
Motivated by the emerging interest in new VLSI processes and technologies, such as Resonant Tunnelin...
Developments in theory and experiment have raised the prospect of an electronic technology based on ...
Abstract — The ability to control the transport of individual electrons in Single Electron Tunneling...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
Threshold logic gates are gaining more importance in recent years due to significant development in ...
This thesis research is focussed on the development of strongly coupled single-charge devices. Singl...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally duri...
The continuing scaling down of complementary metal oxide semiconductor (CMOS) has led researchers to...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
Single-electron tunnelling (SET) devices have very promising properties, like their extremely low po...
This paper presents a single-electron tunneling (SET) device implementation of gates needed to build...