THE MORPHOLOGY AND I-V CHARACTERISTICS OF OMgZn XX1 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Mg doped ZnO thin films were deposited on a glass substrate by spray pyrolysis technique at a substrate temperature equal to under ambient atmosphere. The energy-dispersive X-ray analysis (EDX) spectra of the OMgZn XX1 thin films reveals that all the films contain the elements (Zn, Mg, O) as expected, indicating formation of the OMgZn XX1 films with high purity. From the (SEM) images the grain size values of the OMgZn XX1 thin films deposited by (SP) technique are found to be in the ranges of (59-83)nm, (35-59)nm, (47-71)nm, (47-59)nm, (35-47)nm corresponding to the Mg-concentrations (x = 0, 0.1, 0.2, 0.3, 0.4) respectively. The I-V characteristics of SinOMgZn XX /1 heterojunction for dark and illuminated conditions have been investigated