A MODEL ON THE EFFECT OF INJECTION LEVELS OVER THE OPEN-CIRCUIT VOLTAGE OF SCHOTTKY BARRIER SOLAR CELLS Sanjay Kumar Behura a

The open-circuit voltage, Voc developed across a Schottky-barrier (SB) solar cell has been modeled and calculated under low and high level injection conditions. The model predicted an increase of 42 % in Voc in a metal/n-Si Schottky-barrier solar cell under high level injection condition, as compared to the low level injection condition while the SB interface does not essentially contribute to large surface recombination velocity and a moderate doping concentration is maintained. The metal, Pd has been found to be a better choice in terms of making SB interface with n-Si. The concentration of donor atoms in n-Si has been found to play an important role at both types of injection and the donor concentration should preferably be kept at lower value (<10 16 cm-3) to get higher Voc. The effect of thickness on Voc has been found in both the direct and indirect band gap semiconductors at high level injection condition only. A more pronounced reduction in the Voc has been found for lower work function metals in use