Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insula
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
The gamma radiation hardness of trench isolated CMOS has been assessed with respect to the shift in ...
Power Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies...
The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is kno...
A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semic...
Space applications expose electronic systems to levels of radiation that are damaging to the individ...
We showed that a single heavy ion can wipe out the MOSFET driving current capability in small W devi...
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to gamma radiation from a Co-60 sour...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
Radiation induced currents on single 32 nm MOSFET transistors have been studied using consecutive ru...
Metal Oxide Semiconductor (MOS) capacitors with ultra-thin oxides have been irradiated with ionising...
Low-field leakage current appears as one of the main issues of very thin oxides, which may lead to t...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We briefly review the most important degradation mechanisms affecting ultra-thin gate oxides after e...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
The gamma radiation hardness of trench isolated CMOS has been assessed with respect to the shift in ...
Power Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies...
The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is kno...
A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semic...
Space applications expose electronic systems to levels of radiation that are damaging to the individ...
We showed that a single heavy ion can wipe out the MOSFET driving current capability in small W devi...
MOS capacitors with a 4.4 nm thick gate oxide have been exposed to gamma radiation from a Co-60 sour...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
Radiation induced currents on single 32 nm MOSFET transistors have been studied using consecutive ru...
Metal Oxide Semiconductor (MOS) capacitors with ultra-thin oxides have been irradiated with ionising...
Low-field leakage current appears as one of the main issues of very thin oxides, which may lead to t...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We briefly review the most important degradation mechanisms affecting ultra-thin gate oxides after e...
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid sta...
The gamma radiation hardness of trench isolated CMOS has been assessed with respect to the shift in ...
Power Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) are widely used in power supplies...
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