Journal of Electron Devices

Abstract-- In the field of photovoltaic conversion containing thin films, the materials chalcopyrites such as Cu (In, Ga)S, Se2 are the polycrystalline materials leaders in term of efficiency and profitability, for the production of solar cells in the form of thin films, for terrestrial or space application. These ternary compounds form a broad group of semiconductor materials with optical, electrical and structural different properties. In order to be able to realized a thin films structures in high-efficiency of conversion, the transparent conducting oxides (TCO) play a significant role in the manufacture of this type of cells. Indeed, these oxides such as ZnO, SnO2, ITO... are in general semiconductors of large gap, suitably doped, to present a figure of merit close to the unity. They can play the role of a conducting layer, a barrier layer of chemical of protection or a layer anti-reflecting. The objective of this work is to present the effect of the doping of transparent conductor oxide used (ZnO) for a structure ZnO/CdS/CIGS, and the interest which the oxide coating carries on the improvement of the performances of this structure. This fact, we note that the increase in the concentration of the doping of the layer of ZnO play a fundamental role the optical and electric properties of this layer. Indeed, a high doping of the layer of ZnO: Al lead to a high mobility, therefore a better performances. Another significant result obtained by simulation of such a structure enabled us to obtain a spectral response and a characteristic (I –V) better, which leads to a higher conversion efficiency