Add to ORKGAbstract—This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3 V. A representative implementation is predicted to achieve an ON-state current drive of 0.4 mA/µm with an OFF-state current of 50 nA/µm. Com-parison with homojunction counterparts reveals that the hetero-tunnel-junction implementations may address better the design tradeoff between ON-state drive and OFF-state leakage. Index Terms—Staggered heterojunction, tunneling FET. I
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
Abstract: Staggered tunnel junction (GaAs0.35Sb0.65 /In0.7Ga0.3As) is used to demonstrate heterojunc...
Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale th...
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojuncti...
In this letter, a novel graded-channel heterojunction tunnel field-effect transistor (GCH-TFET) is p...
Abstract — The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly...
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts ...
With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthr...
Abstract—In this letter, we experimentally demonstrate enhancement in drive current ION and reductio...
Abstract—This paper investigates the feasibility of sub-0.2 V high-speed low-power circuits with het...
An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced ...
Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power...
This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge0.45 heterojunction line tu...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
Abstract: Staggered tunnel junction (GaAs0.35Sb0.65 /In0.7Ga0.3As) is used to demonstrate heterojunc...
Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale th...
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojuncti...
In this letter, a novel graded-channel heterojunction tunnel field-effect transistor (GCH-TFET) is p...
Abstract — The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly...
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts ...
With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthr...
Abstract—In this letter, we experimentally demonstrate enhancement in drive current ION and reductio...
Abstract—This paper investigates the feasibility of sub-0.2 V high-speed low-power circuits with het...
An In0.53Ga0.47As/InP heterojunction-channel tunneling field-effect transistor (TFET) with enhanced ...
Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power...
This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge0.45 heterojunction line tu...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
The scaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the driving f...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
Abstract: Staggered tunnel junction (GaAs0.35Sb0.65 /In0.7Ga0.3As) is used to demonstrate heterojunc...