Achieving Ultralow Standby Power With an Efficient SCCMOS Bias Generator

Abstract—Standby power frequently dominates the power bud-get of battery-operated ultralow power sensor nodes. Reducing standby power is therefore a key challenge for further power reduction. Applying known circuit techniques for standby power reduction is challenging since standby power of state-of-the-art sensor node systems is now on the order of nanowatts or less. Hence, the overhead of any leakage reduction technique quickly overshadows any gains. This brief proposes an efficient implemen-tation method for super cutoff CMOS that exploits the unique conditions of power gating to enable a highly efficient charge pump design. The proposed techniques are applied to logic blocks and memory devices. For a very low initial standby power value of tens of picowatts, standby power reduction of up to 19.3 × and 29 % is achieved for logic blocks and memory, respectively. Index Terms—Charge pump, leakage current, sensor node, SRAM, standby power, ultralow power. I