Semiconductor detector Drift time variation

tors er, i ed d ts ca due variation in the drift time even amongst events that occur at the same depth of interaction in the same pixel. The degradation in the depth reconstruction results in poorer imaging performance. The electron drift velocity at each depth is measured using 241Am alpha particles incident on the entire cathode ity of M tors to p Com s, a t significantly, even amongst detectors with good spectroscopic ZnTe stan