Misfit defects

X-ray diffraction Misfit defects in strained-SiGe layers grown on (100) Si-substrates by reduced pressure chemical vapor deposition (RPCVD) were investigated by using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). While (004) omega rocking curve (ω-RC) is not sensitive to 60 ° misfit dislocations in a slightly strain-relaxed sample, they caused an asymmetrical shape to (113) ω-RC. On the other hand, it was found that the partial dislocations associated with stacking faults in highly strain-relaxed sample contributed to significant and symmetric peak broadening of both ω-RCs. © 2008 Elsevier B.V. All rights reserved. 1