Stressed solid-phase epitaxial growth of (011) Si

The solid-phase epitaxial growth kinetics of amorphized (011) Si with application of in-plane 211 uniaxial stress to magnitude of 0.9 0.1 GPa were studied. Tensile stresses did not appreciably change the growth velocity compared with the stress-free case, whereas compression tended to retard the growth velocity to approximately one-half the stress-free value. The results are explained using a prior generalized atomistic model of stressed solid-solid phase transformations. In conjunction with prior observations of stressed solid-phase epitaxial growth of (001) Si, it is advanced that the activation volume tensor associated with ledge migration may be substrate orientation-dependent. Stressed solid-phase epitaxial growth (SPEG) of Si amorphized via ion-implantation has become a topic of greater technological interest during the past several years due to the importance of SPEG in doping Si-based devices and the increasingly prevalent nature of stresses typically present during fabrication.1,2 The stressed-SPEG process has been studied in (001) Si under a variety of differen