Abstract—This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called ”‘integrated cascode” ’ has been designed in order to propose a strong decrease in term of circuit size for Powe
Abstract — The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in...
Power amplifier (PA) is an important component of wireless transceiver in communications system. PAu...
本研究以Chebyshev低通阻抗轉換網路為匹配架構,設計C類寬頻功率放大器(power amplifier,簡稱PA),涵蓋LTE(Long Term Evolution)頻段1至頻段4。其中匹配電...
International audienceThis paper reports on the design of a new power cell dedicated to Ku-band powe...
International audienceThis paper reports on the design of a new power cell dedicated to Ku-band powe...
Abstract—This paper reports on the design of new power cells based on GaAs PHEMT transistors with 0....
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power ampl...
Closed-form relationships for the optimum bias point of high efficiency and widband power amplifiers...
In this paper, a stacked MMIC power amplifier in GaAs pHEMT technology is designed for Ku-band opera...
International audienceThis paper deals with non-linear modeling of power GaN HEMT and design of powe...
In this paper a design approach for compact power amplifier cells at frequencies around and above 30...
Ankara : The Department of Electrical and Electronics Engineering and the Institute of Engineering a...
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has...
International audienceThis paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18 ...
This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequenc...
Abstract — The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in...
Power amplifier (PA) is an important component of wireless transceiver in communications system. PAu...
本研究以Chebyshev低通阻抗轉換網路為匹配架構,設計C類寬頻功率放大器(power amplifier,簡稱PA),涵蓋LTE(Long Term Evolution)頻段1至頻段4。其中匹配電...
International audienceThis paper reports on the design of a new power cell dedicated to Ku-band powe...
International audienceThis paper reports on the design of a new power cell dedicated to Ku-band powe...
Abstract—This paper reports on the design of new power cells based on GaAs PHEMT transistors with 0....
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power ampl...
Closed-form relationships for the optimum bias point of high efficiency and widband power amplifiers...
In this paper, a stacked MMIC power amplifier in GaAs pHEMT technology is designed for Ku-band opera...
International audienceThis paper deals with non-linear modeling of power GaN HEMT and design of powe...
In this paper a design approach for compact power amplifier cells at frequencies around and above 30...
Ankara : The Department of Electrical and Electronics Engineering and the Institute of Engineering a...
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has...
International audienceThis paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18 ...
This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequenc...
Abstract — The design of A 2.4-GHz CMOS Class E cascode power amplifier (PA) for GSM applications in...
Power amplifier (PA) is an important component of wireless transceiver in communications system. PAu...
本研究以Chebyshev低通阻抗轉換網路為匹配架構,設計C類寬頻功率放大器(power amplifier,簡稱PA),涵蓋LTE(Long Term Evolution)頻段1至頻段4。其中匹配電...