High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

Abstract: To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge wave-guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3. The maximum single mode output power of the device reached as high as 450 mW. Key words: semiconductor laser; low threshold; ridge waveguide; single mode DOI: 10.1088/1674-4926/34/11/114011 EEACC: 1310; 4320J 1