Abstract – A microfabrication technology has been developed and demonstrated, which enhances the capabilities and applications of high aspect ratio silicon-on-insulator microelectromechanical systems (SOI-MEMS) by enabling additional independent degrees of freedom of operation: both upward and downward vertical pistoning motion as well as bi-directional rotation. This is accomplished by applying multiple-mask high aspect ratio etches from both the front- and back-side of the SOI device layer, forming beams at different levels. The processes utilize four masks, two for front-side and two for back-side etching. As a result, single-crystal silicon beams with four different cross-sections are fabricated, and can be combined to form many additio...
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is d...
[[abstract]]This work has successfully integrated thick single-crystal silicon (SCS) and thin film p...
Surface-micromachined silicon inertial sensors are limited to relatively high-G applications in part...
and demonstrated, which enhances the capabilities and applica-tions of high aspect ratio silicon-on-...
Abstract—Monolithic high aspect ratio silicon micromirror devices were demonstrated with fully isola...
Abstract—MEMS scanning micromirrors have been proposed to steer a modulated laser beam in order to e...
Abstract—We report on the implementation of laterally elec-trostatically actuated, torsionally suspe...
Abstract—In this paper, fully monolithic silicon optical scanners are demonstrated with large static...
This paper presents the working principle, design, and fabrication of a silicon-based scanning micro...
This work reports on studies and the fabrication process development of micromechanical silicon-on-i...
In creating mirrored silicon structures for micro-optics, the smoothness of the surface and etch rat...
Fully monolithic silicon optical scanners are demonstrated with large static optical beam deflection...
Abstract—We introduce a backside island isolation method for silicon-on-insulator (SOI)-based microe...
This paper presents a novel technological and design study of optical guided- wave MicroElectroMecha...
We introduce a simple isolation method for SOI MEMS technologies. The proposed isolation method by b...
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is d...
[[abstract]]This work has successfully integrated thick single-crystal silicon (SCS) and thin film p...
Surface-micromachined silicon inertial sensors are limited to relatively high-G applications in part...
and demonstrated, which enhances the capabilities and applica-tions of high aspect ratio silicon-on-...
Abstract—Monolithic high aspect ratio silicon micromirror devices were demonstrated with fully isola...
Abstract—MEMS scanning micromirrors have been proposed to steer a modulated laser beam in order to e...
Abstract—We report on the implementation of laterally elec-trostatically actuated, torsionally suspe...
Abstract—In this paper, fully monolithic silicon optical scanners are demonstrated with large static...
This paper presents the working principle, design, and fabrication of a silicon-based scanning micro...
This work reports on studies and the fabrication process development of micromechanical silicon-on-i...
In creating mirrored silicon structures for micro-optics, the smoothness of the surface and etch rat...
Fully monolithic silicon optical scanners are demonstrated with large static optical beam deflection...
Abstract—We introduce a backside island isolation method for silicon-on-insulator (SOI)-based microe...
This paper presents a novel technological and design study of optical guided- wave MicroElectroMecha...
We introduce a simple isolation method for SOI MEMS technologies. The proposed isolation method by b...
A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is d...
[[abstract]]This work has successfully integrated thick single-crystal silicon (SCS) and thin film p...
Surface-micromachined silicon inertial sensors are limited to relatively high-G applications in part...