Add to ORKGA backside dry-etching process has been developed to completely remove the GaAs substrate and expose the device-processed epilayers on it. The process is uniform, reproducible, and preserves the properties and yield of the processed devices. Infrared images produced by focal plane arrays (FPAs) thinned using this alternate backside process, directly and vividly demonstrate the quality of this process
The thinning of semiconductor specimens for trans-mission electron microscopy by the wel l-known jet...
A set of methods were developed to allow for dual-side plasma processing of the electro-optical II-V...
Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semico...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
By the use of multi-level plasma etch experimental designs, an alternative method for post-etch phot...
Compound semiconductor materials such as GaAs and InP have distinct advantages over the more traditi...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
Chemical etches to produce a low-reflectance textured surface on GaAs surfaces were investigated. Th...
AbstractGaAs manufacturing is moving more towards “silicon like” processes, driven by the need to pr...
A new process scheme is proposed that allows manufacturing of 20 µm thin fully processed wafers. Sec...
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor su...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
A case study of backside failure analysis is performed on failed MMIC ASIC devices sealed in SOP pa...
Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lif...
The thinning of semiconductor specimens for trans-mission electron microscopy by the wel l-known jet...
A set of methods were developed to allow for dual-side plasma processing of the electro-optical II-V...
Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semico...
AbstractThe challenges posed to dry etching techniques by thin, damage-sensitive layers in GaAs devi...
By the use of multi-level plasma etch experimental designs, an alternative method for post-etch phot...
Compound semiconductor materials such as GaAs and InP have distinct advantages over the more traditi...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
Chemical etches to produce a low-reflectance textured surface on GaAs surfaces were investigated. Th...
AbstractGaAs manufacturing is moving more towards “silicon like” processes, driven by the need to pr...
A new process scheme is proposed that allows manufacturing of 20 µm thin fully processed wafers. Sec...
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor su...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
A case study of backside failure analysis is performed on failed MMIC ASIC devices sealed in SOP pa...
Novel processes permit integrating thin film semiconductor materials and devices using epitaxial lif...
The thinning of semiconductor specimens for trans-mission electron microscopy by the wel l-known jet...
A set of methods were developed to allow for dual-side plasma processing of the electro-optical II-V...
Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semico...