Add to ORKGAbstract—In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage. Keywords- Hafnium oxide; High-k dielectric; stress induced leakage current, CMOS reliability, time dependent dielectric breakdown. I
The electrical properties of the HfO2 gate dielectrics prepared under different annealing conditions...
Metal-oxide-semiconductor (MOS) devices using a thermally robust HfN/HfO2 gate stack were fabricated...
The evolution over time of the leakage current in HfO2-based MIM capacitors under continuous or peri...
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped...
We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectric...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
[[abstract]]The reliability characteristics of high-k gate stacks of HfO2 films using atomic layer d...
High-K gate dielectric will be needed when MOS devices are scaled down to the sub-100 nm level. HfO2...
Ultra-thin high-k HfO2 gate dielectrics films are fabricated by reacting magnetron sputtering and fu...
The continued reduction in gate length of metal-oxide-semiconductor (MOS) transistors has required a...
We use a multi-scale modeling framework to investigate time dependent dielectric breakdown (TDDB) di...
The ability to shrink Si-based transistors is reaching the spatial scale of sub-0.1 µm, close to fun...
The reliability characteristics of the ultra-thin (EOTsim;0.9nm) HfO 2 gated nMOS capacitor with HfN...
In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) ...
The electrical properties of the HfO2 gate dielectrics prepared under different annealing conditions...
Metal-oxide-semiconductor (MOS) devices using a thermally robust HfN/HfO2 gate stack were fabricated...
The evolution over time of the leakage current in HfO2-based MIM capacitors under continuous or peri...
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped...
We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectric...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
[[abstract]]The reliability characteristics of high-k gate stacks of HfO2 films using atomic layer d...
High-K gate dielectric will be needed when MOS devices are scaled down to the sub-100 nm level. HfO2...
Ultra-thin high-k HfO2 gate dielectrics films are fabricated by reacting magnetron sputtering and fu...
The continued reduction in gate length of metal-oxide-semiconductor (MOS) transistors has required a...
We use a multi-scale modeling framework to investigate time dependent dielectric breakdown (TDDB) di...
The ability to shrink Si-based transistors is reaching the spatial scale of sub-0.1 µm, close to fun...
The reliability characteristics of the ultra-thin (EOTsim;0.9nm) HfO 2 gated nMOS capacitor with HfN...
In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) ...
The electrical properties of the HfO2 gate dielectrics prepared under different annealing conditions...
Metal-oxide-semiconductor (MOS) devices using a thermally robust HfN/HfO2 gate stack were fabricated...
The evolution over time of the leakage current in HfO2-based MIM capacitors under continuous or peri...