Two substrate surface finishes, Au/Ni and organic solderable preservative (OSP), were used to study the effect of the surface finish on the reliability of flip-chip solder joints under electromigration at 150°C ambient temperature. The solder used was eutectic PbSn, and the applied current density was 5 3 103 A/cm2 at the contact window of the chip. The under bump metallurgy (UBM) on the chip was sputtered Cu/Ni. It was found that the mean-time-to-failure (MTTF) of the OSP joints was six times better than that of the Au/Ni joints (3080 h vs. 500 h). Microstructure examinations uncovered that the combined effect of current crowding and the accompanying local Joule heating accelerated the local Ni UBM consumption near the point of electron en...
Electromigration and thermomigration behaviors of eutectic tin-lead solder joints were studied above...
The development of advanced electronic devices leads to highly miniaturized interconnect circuits (I...
High current density induced damages such as electromigration in the on-chip interconnection /metall...
Further miniaturization of electronic systems is approaching new limits due to the failure mechanism...
ABSTRACT: Experimental damage mechanics of flip chip solder joints under current stressing is studie...
ABSTRACT: We studied the electromigration damage to flip-chip solder joints of eutectic Sn/Pb under ...
Abstract: Keys to high wiring density semiconductor packages include flip-chip bonding and build-up ...
This paper presents the effect of electromigration and isothermal ageing in lead-free SAC305 (Sn3Ag0...
Abstract. The effect of under-bump-metallization (UBM) on electromigration was investigated at tempe...
Electromigration (EM) of micro bumps of 50 μm pitch was studied using four-point Kelvin structure. T...
Abstract Microbumps in three-dimensional integrated circuit now becomes essential technology to reac...
Line-type Cu/Sn/Ni and Cu/Sn/Ni-P interconnects as well as real Ni/Sn3.0Ag0.5Cu/Cu and Ni/Sn3.0Ag0.5...
[[abstract]]This paper investigates the electromigration reliability of flip chip packages with and ...
textElectromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging...
textElectromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging...
Electromigration and thermomigration behaviors of eutectic tin-lead solder joints were studied above...
The development of advanced electronic devices leads to highly miniaturized interconnect circuits (I...
High current density induced damages such as electromigration in the on-chip interconnection /metall...
Further miniaturization of electronic systems is approaching new limits due to the failure mechanism...
ABSTRACT: Experimental damage mechanics of flip chip solder joints under current stressing is studie...
ABSTRACT: We studied the electromigration damage to flip-chip solder joints of eutectic Sn/Pb under ...
Abstract: Keys to high wiring density semiconductor packages include flip-chip bonding and build-up ...
This paper presents the effect of electromigration and isothermal ageing in lead-free SAC305 (Sn3Ag0...
Abstract. The effect of under-bump-metallization (UBM) on electromigration was investigated at tempe...
Electromigration (EM) of micro bumps of 50 μm pitch was studied using four-point Kelvin structure. T...
Abstract Microbumps in three-dimensional integrated circuit now becomes essential technology to reac...
Line-type Cu/Sn/Ni and Cu/Sn/Ni-P interconnects as well as real Ni/Sn3.0Ag0.5Cu/Cu and Ni/Sn3.0Ag0.5...
[[abstract]]This paper investigates the electromigration reliability of flip chip packages with and ...
textElectromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging...
textElectromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging...
Electromigration and thermomigration behaviors of eutectic tin-lead solder joints were studied above...
The development of advanced electronic devices leads to highly miniaturized interconnect circuits (I...
High current density induced damages such as electromigration in the on-chip interconnection /metall...