Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions and semiconductor junctions within a single chip
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires special...
Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate place...
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for com...
Combination of complementary MOS and complementary bipolar circuits on monolithic silicon chi
A chip was designed containing lateral bipolar PNP devices with base widths ranging from four to ten...
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in compl...
Includes bibliographical references (pages [40]-41)During the summer of 1986, the first field effect...
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect trans...
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching fo...
An NPN bipolar transistor process was designed and fabricated for incorporation with RIT’s N well CM...
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transisto...
A well understanding of basic structure of Double Diffused Metal Oxide Semiconductor (DMOS) and the ...
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires special...
Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate place...
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for com...
Combination of complementary MOS and complementary bipolar circuits on monolithic silicon chi
A chip was designed containing lateral bipolar PNP devices with base widths ranging from four to ten...
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in compl...
Includes bibliographical references (pages [40]-41)During the summer of 1986, the first field effect...
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect trans...
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching fo...
An NPN bipolar transistor process was designed and fabricated for incorporation with RIT’s N well CM...
Instability, high threshold voltage and gamma radiation sensitivity of metal-oxide-silicon transisto...
A well understanding of basic structure of Double Diffused Metal Oxide Semiconductor (DMOS) and the ...
In this investigation, efforts have been made to move the Microelectronic Engineering Program at Roc...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires special...