Add to ORKG/~d.¢. d.c. collector current gain f, maximum cut-off frequency Vcr collector-emitter voltage V A Early voltage Vcs collector-base voltage With the development of double-polysilicon, self-aligned bipolar technology, the lateral feature size of bipolar transistors has been scaled down. This reduces the parasitic capacitance and resistance, and leads to improved devic
Des transistors bipolaires qui utilisent une couche de polysilicium doper de bore pour la base intri...
The influence of hydrogen passivation using forming gas annealing (FGA), on the electrical performan...
A physics-based and compact model is developed to predict the bipolar transistor DC characteristics ...
A new method to improve the speed of polysilicon emitter transistors and circuits has been proposed....
Abstract A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned s...
Successful demonstration of single-polysilicon bipolar transistors fabricated using selective epitax...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The extrinsic base in LBTs influence high frequency performance by decreasing the effective collecto...
A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the...
The development of integrated circuits toward high voltages introduce difficult compromises in regar...
Recently developed bipolar device structures including their problems and future trends are reviewed...
This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been mo...
Des transistors bipolaires qui utilisent une couche de polysilicium doper de bore pour la base intri...
The influence of hydrogen passivation using forming gas annealing (FGA), on the electrical performan...
A physics-based and compact model is developed to predict the bipolar transistor DC characteristics ...
A new method to improve the speed of polysilicon emitter transistors and circuits has been proposed....
Abstract A new lateral bipolar junction transistor that utilises a double-polysilicon self-aligned s...
Successful demonstration of single-polysilicon bipolar transistors fabricated using selective epitax...
In a self-aligned double polysilicon bipolar junction transistor (BJT) process, the emitter window i...
Polysilicon emitter vertical NPN transistors were fabricated in an attempt to create devices with ve...
The extrinsic base in LBTs influence high frequency performance by decreasing the effective collecto...
A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the...
The development of integrated circuits toward high voltages introduce difficult compromises in regar...
Recently developed bipolar device structures including their problems and future trends are reviewed...
This chapter introduces the bipolar junction transistor (BJT) operation and then presents the theory...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been mo...
Des transistors bipolaires qui utilisent une couche de polysilicium doper de bore pour la base intri...
The influence of hydrogen passivation using forming gas annealing (FGA), on the electrical performan...
A physics-based and compact model is developed to predict the bipolar transistor DC characteristics ...