A solid solution of wurtzite-structure GaN/ZnO absorbs light in the visible and can photo-split water. The photo-electrons reduce protons to H2 when a co-catalyst is loaded. The photo-holes oxi-dize water into O2 plus protons at the semiconductor-alloy/water interface. Microscopic details of the water oxidation process are unknown. This thesis focuses on water adsorption and oxidation on the surface of pure wurtzite GaN. A separate project on the relative stability of one-dimensional ZnO nanostructures is also in-cluded. The first part of the thesis presents a study of water adsorption iii on wurtzite GaN. The structures and energetics of a water mono-layer adsorbed on the (101̄0) nonpolar surface of GaN are studied computationally using de...
The interface between water and ZnO plays an important role in many domains of technological relevan...
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chem...
Water adsorption and decomposition on stoichiometrically perfect and oxygen vacancy containing ZnGa<...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
The first wetting layer on the GaN (0001) surface has been investigated at the level of density func...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Photoelectrochemical water splitting plays a key role in a promising path to the carbon-neutral gene...
The interface between water and ZnO plays an important role in many domains of technological relevan...
The interface between water and ZnO plays an important role in many domains of technological relevan...
The interface between water and ZnO plays an important role in many domains of technological relevan...
Recently, gallium oxynitride was shown to be a promising material for photoelectrochemical water-spl...
The interface between water and ZnO plays an important role in many domains of technological relevan...
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chem...
Water adsorption and decomposition on stoichiometrically perfect and oxygen vacancy containing ZnGa<...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
We present a first-principles study of water adsorption on a wurtzite GaN (101-0) surface. We studie...
The first wetting layer on the GaN (0001) surface has been investigated at the level of density func...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Domen has observed that the GaN/ZnO semiconductor alloy serves, in the presence of a sacrificial ele...
Photoelectrochemical water splitting plays a key role in a promising path to the carbon-neutral gene...
The interface between water and ZnO plays an important role in many domains of technological relevan...
The interface between water and ZnO plays an important role in many domains of technological relevan...
The interface between water and ZnO plays an important role in many domains of technological relevan...
Recently, gallium oxynitride was shown to be a promising material for photoelectrochemical water-spl...
The interface between water and ZnO plays an important role in many domains of technological relevan...
We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chem...
Water adsorption and decomposition on stoichiometrically perfect and oxygen vacancy containing ZnGa<...