Effect of Irradiation on Electrical Conduction and Crystallization in Ge1-x Six Films

Influence of thermal annealing and effect of gamma irradiation on electrical conduction in Ge1-хSix (0 ≤ x ≤ 15) films were studied. The films were deposited from molecular beams in ultrahigh vacuum. The influence of thermal annealing and the effect of gamma irradiation were investigated by the X-ray diffraction analysis and the electric conductivity method. It was found that the thermal annealing of amorphous Ge1-хSix films increases their resistivity due to fractional crystallization in the films. The irradiation of the samples by an electron beam with an energy of 1.26 MeV and a dose of 10 16 cm-2 increases the crystallization temperature from 460 up to 560 K (with an increase of the Si content i