EVOLUTION OF DISLOCATION LOOPS IN SILICON IN AN INERT AMBIENT-II

Abstract-A plan-view TEM study of the distribution, geometry and time-dependent anneal behavior of type-11 dislocation loops induced by I x 10’5/cm2, 50 keV Si+ implantation into silicon was presented in Part I of this paper. A point-defect based model representing loop-to-loop interactions (Ostwald-ripening) during annealing is developed. The variation in the size and distribution of the loops as a function of anneal time and temperature is correctly simulated as part of this modeling exercise. Other quantities of interest, such as the average radii of the loop distribution are extracted from the model and directly compared with experimental values. 1