Add to ORKGTime evolution of the depth profile of {113} defects during transient enhanced diffusion in silico
[[abstract]]A simple moving boundary diffusion model has been used to characterize defect incorporat...
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate mo...
Computational diffusion kinetics and its applications in study and design of rare metallic material
International audienceThe evolution of {113} defects as a function of time and depth within Si impla...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of...
The transient enhanced diffusion of dopants in silicon is known to begoverned by the interaction of ...
220 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The work seeks to study the e...
Experiments dealing with irradiation enhanced diffusion in semiconductors in which the exciting part...
For the same experiment duration, the higher the defect density, the larger the ‘‘tail’’; for the sa...
The diffusion equation is solved for a semi-infinite region in the case of irradiation-enhanced di...
Rapporteurs : A.HALIMAOUI et B.PICHAUD Examinateurs : F.OLIVIÈ, J.BOULMER, et D.ALQUIER invitéé : E....
Abstract-This paper describes progress made in modeling transient enhanced diffusion (TED) on the ba...
The accurate simulation of the transient enhanced diffusion (TED) of dopants during the post-implant...
A method is proposed to reduce the number of equations and the calculation time of a one-step modeli...
[[abstract]]A simple moving boundary diffusion model has been used to characterize defect incorporat...
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate mo...
Computational diffusion kinetics and its applications in study and design of rare metallic material
International audienceThe evolution of {113} defects as a function of time and depth within Si impla...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of...
The transient enhanced diffusion of dopants in silicon is known to begoverned by the interaction of ...
220 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The work seeks to study the e...
Experiments dealing with irradiation enhanced diffusion in semiconductors in which the exciting part...
For the same experiment duration, the higher the defect density, the larger the ‘‘tail’’; for the sa...
The diffusion equation is solved for a semi-infinite region in the case of irradiation-enhanced di...
Rapporteurs : A.HALIMAOUI et B.PICHAUD Examinateurs : F.OLIVIÈ, J.BOULMER, et D.ALQUIER invitéé : E....
Abstract-This paper describes progress made in modeling transient enhanced diffusion (TED) on the ba...
The accurate simulation of the transient enhanced diffusion (TED) of dopants during the post-implant...
A method is proposed to reduce the number of equations and the calculation time of a one-step modeli...
[[abstract]]A simple moving boundary diffusion model has been used to characterize defect incorporat...
To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate mo...
Computational diffusion kinetics and its applications in study and design of rare metallic material