Add to ORKGhigher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up. I
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories ...
International audienceThree synchronous dynamic random access memories (SDRAMs) from the same manufa...
We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash...
We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by ...
We compare radiation effects on the highest density multi-level cell NOR and single-level cell NAND ...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
This paper discusses the current problem of the electronic memory reliability in terms of the ionizi...
We review ionizing radiation effects in Flash memories, the current dominant technology in the comme...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex...
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are beco...
Besides being widely used in virtually all terrestrial applications requiring non-volatile storage, ...
Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel st...
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories ...
International audienceThree synchronous dynamic random access memories (SDRAMs) from the same manufa...
We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash...
We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by ...
We compare radiation effects on the highest density multi-level cell NOR and single-level cell NAND ...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
This paper discusses the current problem of the electronic memory reliability in terms of the ionizi...
We review ionizing radiation effects in Flash memories, the current dominant technology in the comme...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex...
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are beco...
Besides being widely used in virtually all terrestrial applications requiring non-volatile storage, ...
Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel st...
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories ...
International audienceThree synchronous dynamic random access memories (SDRAMs) from the same manufa...
We discuss new experimental results on the post-radiation annealing of Floating Gate errors in Flash...