Add to ORKGDavid, Dugdale (2000) Electronic structure calculations on nitride semiconductors and their alloys
10.1016/S1369-8001(02)00021-5Materials Science in Semiconductor Processing46577-58
A set of software tools for the determination of the band structure of zinc-blende, wurtzite, 4H, an...
Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of application...
Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial c...
Electronic band structure, optical properties and chemical bonding of group III nitride alloys 01.04...
Linear Combination of Atomic Orbitals (LCAO) electron band structure calculations are used to examin...
Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial c...
The empirical pseudopotential method has been used to conduct band structure calculations on gallium...
The III-Nitride semiconductors and their nanostructures have achieved tremendous advances in both ma...
SIGLEAvailable from British Library Document Supply Centre- DSC:6609.025(DL/SCI/P--675T) / BLDSC - B...
Structural stability of nitride semiconductors is investigated using an empirical interatomic potent...
Tato práce se věnuje ab-initio simulacím binárních, ternárních a vybraných kvaternárních nitridů pře...
Tato práce se věnuje ab-initio simulacím binárních, ternárních a vybraných kvaternárních nitridů pře...
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
This thesis is concerned with the electronic and structural properties of interfaces and quantum wel...
10.1016/S1369-8001(02)00021-5Materials Science in Semiconductor Processing46577-58
A set of software tools for the determination of the band structure of zinc-blende, wurtzite, 4H, an...
Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of application...
Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial c...
Electronic band structure, optical properties and chemical bonding of group III nitride alloys 01.04...
Linear Combination of Atomic Orbitals (LCAO) electron band structure calculations are used to examin...
Calculations of the electronic properties of AIN, GaN, InN and their alloys are presented. Initial c...
The empirical pseudopotential method has been used to conduct band structure calculations on gallium...
The III-Nitride semiconductors and their nanostructures have achieved tremendous advances in both ma...
SIGLEAvailable from British Library Document Supply Centre- DSC:6609.025(DL/SCI/P--675T) / BLDSC - B...
Structural stability of nitride semiconductors is investigated using an empirical interatomic potent...
Tato práce se věnuje ab-initio simulacím binárních, ternárních a vybraných kvaternárních nitridů pře...
Tato práce se věnuje ab-initio simulacím binárních, ternárních a vybraných kvaternárních nitridů pře...
Ah&ret--A nearest-neighbor semi-empirical tight-binding theory of energy bands in zincblende and...
This thesis is concerned with the electronic and structural properties of interfaces and quantum wel...
10.1016/S1369-8001(02)00021-5Materials Science in Semiconductor Processing46577-58
A set of software tools for the determination of the band structure of zinc-blende, wurtzite, 4H, an...
Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of application...