Supporting Information: Comparison of SAM-Based Junctions with Ga2O3/EGaIn Top- Electrodes to other Large-Area Tunneling Junctions

S2 Nomenclature. We studied four different SAMs of alkanethiolates on silver electrodes. We use the general notation Ag-SCn-1CH3//Ga2O3/EGaIn with n = the number of carbon atoms in the alkyl chain to describe the junctions: Here, Ag-SCn-1CH3 is a silver thin-film electrode (with an area of about 1 cm 2 supporting a SAM of SCn-1CH3 with n = 12, 14, 16, or 18. We describe the interfaces with the symbols “-”, which indicates a chemisorbed contact, “/ ” which indicates the contact between Ga2O3 and bulk EGaIn, and “//”, which indicates the presence of a non-covalent interface. The symbol V is defined as the difference in voltage between the two electrodes. We abbreviate polydimethylsiloxane as PDMS. Introduction. Charge transport through organic matter that would normally be considered to be electrically insulating is important in fields from biology to electronics