Abstract-An efficient strategy to utilize a parallel signature analyzer (PSA) for concurrent soft-error correction in DRAM’S is described. For a two-level w-bit, n-word memory system, the proposed technique needs only one additional chip as opposed to log, w + 2 in the conventional Hamming code. Such an error-correction circuit (ECC) significantly improves the reliability of the memory system. I
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
A parallel associative processor is formed from a DRAM circuit whose storage positions are organized...
Abstract—Ternary content-addressable memory (TCAM) de-vices are increasingly used for performing hig...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
Abstract-As feature size keeps shrinking, how to maintain the reliability becomes an important issue...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
We propose a low cost concurrent error detection strategy to improve the Reliability, Availability, ...
Servers and HPC systems often use a strong memory error correction code, or ECC, to meet their relia...
We propose a low cost concurrent error detection strategy to improve the Reliability, Availability, ...
AbstractParallel signature analyzers (PSAs) implemented as multiple input linear feedback shift regi...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
Most server-grade memory systems provide Chipkill-Correct error protection at the expense of power a...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
A parallel associative processor is formed from a DRAM circuit whose storage positions are organized...
Abstract—Ternary content-addressable memory (TCAM) de-vices are increasingly used for performing hig...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
Abstract-As feature size keeps shrinking, how to maintain the reliability becomes an important issue...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
We propose a low cost concurrent error detection strategy to improve the Reliability, Availability, ...
Servers and HPC systems often use a strong memory error correction code, or ECC, to meet their relia...
We propose a low cost concurrent error detection strategy to improve the Reliability, Availability, ...
AbstractParallel signature analyzers (PSAs) implemented as multiple input linear feedback shift regi...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
As DRAM technology continues to evolve towards smaller feature sizes and increased densities, faults...
Most server-grade memory systems provide Chipkill-Correct error protection at the expense of power a...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
A parallel associative processor is formed from a DRAM circuit whose storage positions are organized...
Abstract—Ternary content-addressable memory (TCAM) de-vices are increasingly used for performing hig...