Reduced Surface Field Technology For LDMOS: A Review

the frequently used method to design a high voltage lateral devices with high break down voltage and low on-resistance. Devices working on higher voltages require thick and low doped epitaxial layer, which makes them difficult to get integrated with low voltage circuitry. Because of high resistivity, the on- resistance of the epitaxial layer is large. RESURF concept gives the best tradeoff between the break down voltage and on-resistance of lateral devices. This paper gives a technical review of RESURF concept used for LDMOS and also discusses about multiple RESURF technology. Keywords- Break down voltage (BV), LDMOS (Laterall