We have fabricated high qual i ty superconduct ing NbNxC t h i n films us ing a low-energy dual ion-beam f a b r i g a t i o n method. I n t h i s method, one i on beam s p u t t e r s Nb t o the s u b s t r a t e while the second beam bombards the growing film wi th low energy (-100 eV) N 2 t C H 4 ions. The use o f methane a s a source of carbo
SIGLEAvailable from British Library Document Supply Centre- DSC:DX187200 / BLDSC - British Library D...
Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various ...
The basic principles of the Ion Beam Induced CVD (IBICVD) technique are presented and discussed in c...
A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and fo...
SIGLEAvailable from British Library Document Supply Centre- DSC:D062695 / BLDSC - British Library Do...
Intense pulsed ion beams (500 keV, 30 kA, 0.5 {mu}s) are being investigated for materials processing...
A single and dual ion beam system was used to generate amorphous carbon films with diamond like prop...
A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel mater...
We proposed an experimental methodology for producing films on substrates with an ion beam induced c...
Various processes can generate energetic particles suitable for thin film deposition. In some more c...
Amorphous, hydrogenated carbon (a-C:H) films were prepared by direct ion-beam deposition using a bro...
By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffracti...
In the thesis the development of two equipment for preparation of ultrathin films under ultrahign va...
A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is ...
We present preliminary results for thin films grown with a recently commissioned ion beam codepositi...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX187200 / BLDSC - British Library D...
Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various ...
The basic principles of the Ion Beam Induced CVD (IBICVD) technique are presented and discussed in c...
A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and fo...
SIGLEAvailable from British Library Document Supply Centre- DSC:D062695 / BLDSC - British Library Do...
Intense pulsed ion beams (500 keV, 30 kA, 0.5 {mu}s) are being investigated for materials processing...
A single and dual ion beam system was used to generate amorphous carbon films with diamond like prop...
A dual-source mass-analysed low-energy ion beam system, intended for investigations into novel mater...
We proposed an experimental methodology for producing films on substrates with an ion beam induced c...
Various processes can generate energetic particles suitable for thin film deposition. In some more c...
Amorphous, hydrogenated carbon (a-C:H) films were prepared by direct ion-beam deposition using a bro...
By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffracti...
In the thesis the development of two equipment for preparation of ultrathin films under ultrahign va...
A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is ...
We present preliminary results for thin films grown with a recently commissioned ion beam codepositi...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX187200 / BLDSC - British Library D...
Thin films of silicon carbide are produced by using the technology of ion beam evaporation. Various ...
The basic principles of the Ion Beam Induced CVD (IBICVD) technique are presented and discussed in c...