Add to ORKGhas proved to be a very accurate tool for simulation of various implantation processes. In this paper we demon-strate that the module can be successfully used not onl
Abstract—Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous...
Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed usi...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX83397 / BLDSC - British Library Do...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
A numerically efficient model for the simulation of ion implantation doping profiles in silicon afte...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
Strategy and Expectations: For the class project, I decided to build a model that would approximate ...
In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, we...
Abstract—Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous...
Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed usi...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...
Many modern semiconductor fabrication techniques employ ion implantation technology to produce doped...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX83397 / BLDSC - British Library Do...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
A numerically efficient model for the simulation of ion implantation doping profiles in silicon afte...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
textA physically-based 3-dimensional Monte-Carlo simulator has been developed within UT-MARLOWE, whi...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
Strategy and Expectations: For the class project, I decided to build a model that would approximate ...
In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, we...
Abstract—Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous...
Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed usi...
The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating obje...