Fabrication method produces stable and reliable metallic systems for interconnections, contact pads, and bonded leads in silicon planar integrated circuits. The method is based on substrate isolation of the interconnection metal from the contact pad and bonded wire
Investigation of defective electrical contacts of aluminum interconnecting films to polycrystalline ...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
With the continual miniaturization of interconnections on printed circuit boards, the use of micro-a...
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
Commercially available sonic welding system and a specially-designed tip bonds aluminum foil interco...
Diffusion-bonded joints between gold-plated Kovar leads and indium-plated copper circuit pads offer ...
Thermocompression bonding of a gold wire to a gallium-arsenide wafer produces a quality surface barr...
Bonding techniques, stress analysis, and bond properties for large-area silicon wafer
Two concepts were explored to improve the mechanical reliability of silicon integrated circuits in p...
Diffusion welding of large area silicon wafers without altering electrical properties of semiconduct...
ABSTRACT: As silicon detectors in high energy physics experiments require increasingly complex assem...
This paper describes and discusses a novel manufacturing process that enables an advanced top-level ...
Integrated circuit chip-to-chip interconnections are made via gold pads on each chip that are bonded...
Wire bonding is still the dominating technology for realizing the first level contact of semiconduct...
Investigation of defective electrical contacts of aluminum interconnecting films to polycrystalline ...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
With the continual miniaturization of interconnections on printed circuit boards, the use of micro-a...
Etchant containing chloroplatinous or chloroplatinic acid greatly reduces contact resistance between...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
Commercially available sonic welding system and a specially-designed tip bonds aluminum foil interco...
Diffusion-bonded joints between gold-plated Kovar leads and indium-plated copper circuit pads offer ...
Thermocompression bonding of a gold wire to a gallium-arsenide wafer produces a quality surface barr...
Bonding techniques, stress analysis, and bond properties for large-area silicon wafer
Two concepts were explored to improve the mechanical reliability of silicon integrated circuits in p...
Diffusion welding of large area silicon wafers without altering electrical properties of semiconduct...
ABSTRACT: As silicon detectors in high energy physics experiments require increasingly complex assem...
This paper describes and discusses a novel manufacturing process that enables an advanced top-level ...
Integrated circuit chip-to-chip interconnections are made via gold pads on each chip that are bonded...
Wire bonding is still the dominating technology for realizing the first level contact of semiconduct...
Investigation of defective electrical contacts of aluminum interconnecting films to polycrystalline ...
Silicon wafer fabrication facilities are developing copper metallized wafers. Advantages of copper c...
With the continual miniaturization of interconnections on printed circuit boards, the use of micro-a...