Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform

port simulation oers the possibility to ex-tract information about all quantities deriv-able from the semiclassical distribution func-tion, whose accuracy is limited explicitly by statistical convergence and implicitly by the quality of the physical models. To date, much eort has been devoted to improving mod-els for bandstructure and scattering mecha-nisms, such as electron-phonon scattering, im-pact ionization and other carrier-carrier scat-tering [1]. However, the practical usefulness of Monte Carlo device simulation has not en-tirely lived up to its promise, as evidenced by the observed propensity to simulated simpli-ed or imaginary device structures. A unique device simulation environment has been developed which unites the capa-bilities of process, drift-diusion/hydro, and Monte Carlo simulation into a single platform. One may use Dios ISE [2] to begin with a process simulation. Drift-diusion or hydro-dynamic simulations can be performed with the mixed-modemulti-dimensional device sim-ulator Dessis IS