Abstract — The basic aim of this research work is to present the synthesis of ZnSe thin film, by varying doping concentration of selenium oxide on ITO plate using a relatively simple and low cost traditional electrodeposistion technique. The physical properties obtained are similar to that reported earlier. The compatibility of the room temperature ZnSe thin films for structural, optical properties are investigated by using the techniques, X-ray diffraction (XRD), FTIR, UV-Vis spectroscopy, and morphological studies are analysed by using scanning electron microscope, (SEM). The crystallite size was calculated ranges from 30-40 nm, and band gap values are nearly equal to 2.2 eV, the selenium oxide concentration increases the band gap of the ...
The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The...
The synthesis of polycrystalline thin films of cubic ZnSe by electrochemical plating on conducting s...
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperatur...
Department of Physics, Khadir Mohideen College, Adirampattinam-614 701, Tamilnadu, India E-mail : a...
Zinc selenide attracts a lot of attention due to its wide potential applications in photovoltaic and...
In the present study, we report the room temperature electrosynthesis of Zinc selenide (ZnSe) thin f...
Zinc selenide thin films on ITO glass substrate have been grown by an electrochemical deposition tec...
ZnSe thin film deposition and their properties are briefly reviewed in this article. This includes a...
396-401In present work, nanostructured films of ZnSe are synthesized on glass substrates by using el...
ZnSe thin films are prepared by thermal evaporation of nanocrystalline ZnSe particles synthesized us...
The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
In this study, zinc selenide (ZnSe) thin films were produced on glass substrate by using chemical ba...
Zinc-selenide, ZnSe,is aII-IV semiconductor that is known for its wide band gap of ~2.6 eV. In the g...
Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (s...
The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The...
The synthesis of polycrystalline thin films of cubic ZnSe by electrochemical plating on conducting s...
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperatur...
Department of Physics, Khadir Mohideen College, Adirampattinam-614 701, Tamilnadu, India E-mail : a...
Zinc selenide attracts a lot of attention due to its wide potential applications in photovoltaic and...
In the present study, we report the room temperature electrosynthesis of Zinc selenide (ZnSe) thin f...
Zinc selenide thin films on ITO glass substrate have been grown by an electrochemical deposition tec...
ZnSe thin film deposition and their properties are briefly reviewed in this article. This includes a...
396-401In present work, nanostructured films of ZnSe are synthesized on glass substrates by using el...
ZnSe thin films are prepared by thermal evaporation of nanocrystalline ZnSe particles synthesized us...
The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition...
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical depositio...
In this study, zinc selenide (ZnSe) thin films were produced on glass substrate by using chemical ba...
Zinc-selenide, ZnSe,is aII-IV semiconductor that is known for its wide band gap of ~2.6 eV. In the g...
Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (s...
The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The...
The synthesis of polycrystalline thin films of cubic ZnSe by electrochemical plating on conducting s...
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperatur...