Handling Guidelines for ESD Protection of GaAs MMICs

(ESD), and GaAs MMICs are no exception. Many digital semiconductors have some level of protection circuitry designed into the input and output pins. GaAs MMIC designs rarely include built-in protection circuitry however, due to RF performance issues. Protection circuits will add reactive parasitic that limit high frequency performance. Circuitry on GaAs MMICs can be damaged by electrostatic discharge at voltages below 250 V. In some cases, this classifies these devices as Class 0, meaning that stringent levels of ESD protection must be observed. Electrostatic charges are created by the contact and separation of two objects. The magnitude of this charge buildup varies within different materials. Conductive and static dissipative materials release this charge quite easily to a grounded surface. Insulators retain the charge for a longer period of time. To protect static sensitive devices from an electrostatic discharge, the parts must be completely enclosed with protective conductive packaging. This shielding protects the parts inside by causing any static discharge to follow the shortest conductive path t