Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or Indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 μA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices. 1