1 X-ray radiation effects in multilayer epitaxial graphene

We characterize multilayer graphene grown on C-face SiC before and after exposure to a total ionizing dose (TID) of 12 Mrad(SiO2) using a 10 keV X-ray source. While we observe the partial peeling of the top graphene layer and the appearance of a modest Raman D-peak, we find that the electrical characteristics (mobility, sheet resistivity, free carrier concentration) of the material are mostly unaffected by radiation exposure. Combined with X-ray photoelectron spectroscopy (XPS) data showing numerous carbon-oxygen bonds after irradiation, we conclude that the primary damage mechanism is through surface etching from reactive oxygen species created by the X-rays