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Abstract—In high current, high voltage, high temperature (T>125°C) power applications, commercially available conventional silicon thyristors are not suited because they present high leakage current. In this context, this paper presents a high symmetrical (voltage) thyristor structure that presents a lower leakage current and higher breakover voltage as compared to the conventional thyristor at T>125°C. It is shown through 2D physical simulations that the replacement of the P emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward blocking state at high temperature. A fine-tune of the anode side configuration will improve the forward off-state behaviour with only a negligible on-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements in terms of off-state forward breakover voltage and leakage current and also presents a high reverse blocking voltage. Index Terms — Pulsed power, High voltage thyristor, TCA