Abstract — In this study, the real and imaginary parts of the complex permittivity of PZT ferroelectric thin films are studied in the frequency range of 100 Hz – 100 MHz. The permittivity is well fitted by the Cole-Cole model. The variation of the relaxation time with temperature is described by the Arrhenius law and an activation energy of 0.38 eV is found. Due to its nonlinear character, the dielectric response of the ferroelectric sample depends on the amplitude of the applied ac electric field. The permittivity is composed of three different contributions: the first is due to intrinsic lattice, the second to domain wall vibrations and the third to domain wall jumps between pinning centers. The last one depends on the electric field so i...
The dielectric and piezoelectric response of ferroelectric thin films and ceramics was investigated ...
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the...
International audienceFerroelectric materials subjected to a DC electric field have their dielectric...
International audienceIn this study, the real and imaginary parts of the complex permittivity of lea...
International audienceIn this study, the real and imaginary parts of the complex permittivity of PZT...
International audienceFunctional ferroelectric thin films present a great interest for telecommunica...
Electrical permittivity dependence on electric external bias field was investigated in PZT thin film...
In this article, the domain wall densities calculated from simulated domain configurations are used ...
The electrical permittivity dependence on the electric bias field was investigated in Pb(Zr-0.53, Ti...
Abstract. The size effect in thin film sandwich structures is considered. Three types of boundary co...
International audienceFerroelectric materials are interesting for their switching polarization and p...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
International audienceIn antiferroelectric PbZrO 3 thin films, a weak residual ferroelectric phase i...
We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)...
The dielectric and piezoelectric response of ferroelectric thin films and ceramics was investigated ...
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the...
International audienceFerroelectric materials subjected to a DC electric field have their dielectric...
International audienceIn this study, the real and imaginary parts of the complex permittivity of lea...
International audienceIn this study, the real and imaginary parts of the complex permittivity of PZT...
International audienceFunctional ferroelectric thin films present a great interest for telecommunica...
Electrical permittivity dependence on electric external bias field was investigated in PZT thin film...
In this article, the domain wall densities calculated from simulated domain configurations are used ...
The electrical permittivity dependence on the electric bias field was investigated in Pb(Zr-0.53, Ti...
Abstract. The size effect in thin film sandwich structures is considered. Three types of boundary co...
International audienceFerroelectric materials are interesting for their switching polarization and p...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
International audienceIn antiferroelectric PbZrO 3 thin films, a weak residual ferroelectric phase i...
We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)...
The dielectric and piezoelectric response of ferroelectric thin films and ceramics was investigated ...
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the...
International audienceFerroelectric materials subjected to a DC electric field have their dielectric...