Kinetic processes and Phase-transition of CVD processes for T i3SiC2

Abstract. In this paper we present a kinetic model based on numerical simulations of a chemical vapor deposition (CVD) process. We discuss a model that is based on kinetics of the deposition rates to the material. Such a simple model can explain the experimental results. Based on experiments with T i3SiC2 we verify our model. Here differ-ent processes of ionized T i+, T i++ and C are important to achieve our stoichiometry. The numerical methods are based on iterative schemes to solve coupled and nonlinear differential equations. The results are dis-cussed with physical experiments to give a valid model for the assumed growth of thin layers