Add to ORKGOne of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailability suitable substrates. The lack of suitable substrates leads to poor quality epitaxial films with dislocation densities in the range of 1010-1012 cm-
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overg...
We have studied the growth of GaN on porous SiC and GaN substrates, employing both plasma-assisted m...
We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitax...
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable s...
Porous SiC (PSiC) substrates were used for the growth of GaN by reactive molecular-beam epitaxy with...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
Optical devices based on III-V nitrides operating in the visible region involve GaN based materials....
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) subs...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overg...
We have studied the growth of GaN on porous SiC and GaN substrates, employing both plasma-assisted m...
We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitax...
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable s...
Porous SiC (PSiC) substrates were used for the growth of GaN by reactive molecular-beam epitaxy with...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
Optical devices based on III-V nitrides operating in the visible region involve GaN based materials....
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) subs...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...