A combination of picosecond photoluminescence and electrochemical studies reveals information about the GaAs/methanol interface. The electrochemistry occurring at the solid/nonaqueous liquid junction is found to have a strong influence on the observed photoluminescence as seen by photoluminescence vs voltage (PL-V) scans and by trends in the time-resolved photoluminescence decays. The effect of corrosion of the cell on the PL-V profile is examined in detail. It is found that the inclusion of the redox couple gives some protection from corrosion, but the addition of a small amount of water to the nonaqueous cell gives even more. Further water additions lead the cell back to a state that is conducive to corrosion and eventually leads to Fermi...
Basic electrochemical processes at GaAs, GaAsP, and GaA1As electrodes were studied in H~O ~ aqueous ...
As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied...
The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electro...
The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogen...
The electrochemical nd photoelectrochemical behavior of surfaces of (100) n-GaAs and p-GaAs were stu...
High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemica...
High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemica...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
The corrosion of GaAs has received increasing attention recently. For this small band gap semiconduc...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
The process of hole injection into the valence band of n-GaAs from the oxidized component ofredox co...
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their sub...
n-GaAs/KOHSe^(-/2-)(aq) contacts have been studied using real time photoluminescence decay technique...
n-GaAs/KOHSe^(-/2-)(aq) contacts have been studied using real time photoluminescence decay technique...
The object of these is a comparative study of the photoelectrochemical behavior of gaas and inp. In ...
Basic electrochemical processes at GaAs, GaAsP, and GaA1As electrodes were studied in H~O ~ aqueous ...
As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied...
The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electro...
The formation of a porous layer on the surface of gallium arsenide anode, n-GaAs, increases photogen...
The electrochemical nd photoelectrochemical behavior of surfaces of (100) n-GaAs and p-GaAs were stu...
High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemica...
High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemica...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
The corrosion of GaAs has received increasing attention recently. For this small band gap semiconduc...
Current density vs potential, open-circuit voltage vs temperature, and differential capacitance vs p...
The process of hole injection into the valence band of n-GaAs from the oxidized component ofredox co...
Correlations between the surface chemistry of etched, (100) oriented n-GaAs electrodes and their sub...
n-GaAs/KOHSe^(-/2-)(aq) contacts have been studied using real time photoluminescence decay technique...
n-GaAs/KOHSe^(-/2-)(aq) contacts have been studied using real time photoluminescence decay technique...
The object of these is a comparative study of the photoelectrochemical behavior of gaas and inp. In ...
Basic electrochemical processes at GaAs, GaAsP, and GaA1As electrodes were studied in H~O ~ aqueous ...
As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied...
The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electro...