Physics Investigation of the Role of Negatively Charged Impurity Centers in Formation of Inverse Distribution of Photoelectrons; on a Coefficient of Hot Charge Carrier Trapping by Repulsive Impurity Centers

ABSTRACT. The active medium with the inverse charge carrier population is known to form the basis of up-to-date semiconductor masers and lasers. This population can be created by various actions including electron generation and heating towards the conductivity region by means of electromagnetic radiation (photoheating). The objective of our studies was to find the conditions for formation of regions of hot photoelectron distribution when their lifetime is controlled by trapping by negatively and positively charged impurity centers for different energy relaxation mechanisms, both quasi-elastic and strongly inelastic. © 2009 Bull. Georg. Natl. Acad. Sci. Key words: inverse population, photoelectron distribution. To study the possibility of occurrence of the inverse distribution function at hot photoelectrons trapping by repulsive impurity centers it is, first of all, necessary to establish the analytical form of the energy dependence of the trapping coefficient ()εC. For this purpose, a great bulk of the existing experimental data (essentially for Si and Ge), as well as theoretical results have been analyzed to calculate the trapping coefficient. It is clea