DRIFT AND HALL MOBILITY OF HOLE CARRIERS IN STRAINED SIGE FILMS GROWN ON (001) SI SUBSTRATES

Drift and Hall mobility of hole carriers in strained SiGe films grown on (001) Si substrates: SiGe/Si bipolar heterojunction transistors (HBTs) have become widespread nowadays due to their unquestioned advantages over the Si bipolar junction transistors. When simulating the dc-regime of SiGe NPN HBT, as well as designing the new transistors, the input parameters are the collector current Jc, and the sheet resistance of the base RSB, which depend on the mobility of the base minority n-carriers and majority holes, respectively. This paper presents an extensive overview on the influence of the dopant concentration, Ge content, and SiGe strain on the drift and Hall carrier mobility. We show the mathematical description of the dependence µdp, µHp = f(Nimp, XGe), which can be used at the simulation of the dc-regime of SiGe HBT, and also we give an equation relating Jc and RSB, which accounts for the effect of active base narrowing at high dopant levels