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We present the latest results of our research regarding meshes suitable for both process and device simulation. Two major results are discussed in this paper: a consistent multi-dimensional mesh quality definition and a new hy-brid multi-dimensional mesh generation approach. The consistent definition achieved is based on the conditions imposed by the Box integration method applied for both semiconductor process and device equations. The hybrid ap-proach developed reaches a consistent mesh quality in all dimensions and it overcomes the severe limitations of our former mesh generators. Finally, it has been experimentally demonstrated that both the unified conditions and the hybrid approach are suitable for stable discretization schemes for device simulations based on the Box method. 1 Mesh quality required for device simulation When developing a multi-dimensional device simulation tool based on the Box method (e.g. DESSIS..SE [1]), a consistent definition of the required mesh quality in all thre